Oxidation effects on CuInxGa1-xSeyS2-y thin film growth by solution processes

Title
Oxidation effects on CuInxGa1-xSeyS2-y thin film growth by solution processes
Authors
박세진이은주전효상곽지혜오민규민병권
Keywords
CIGS; Oxidation; Solution process; Solar cells; CuInxGa1-xSeyS2-y; Thin films; Air-annealing
Issue Date
2012-01
Publisher
Thin solid films
Citation
VOL 520, NO 7, 3048-3053
Abstract
The oxidation effects on CuInxGa1-xSeyS2-y (CIGS) thin film growth by precursor solution based coating method with a three-step heat treatment process (oxidation, sulfurization, and selenization) were investigated to optimize the oxidation conditions for realizing highly efficient thin film solar cells. Oxidation by air-annealing at elevated temperature after coating with Cu, In, and Ga precursor solution on Mo-coated soda-lime glasses removed residual carbon impurities, resulting in nearly carbon-free CIGS film. However, the air-annealing at above 400 °C induced undesirable oxidation of a Mo layer coated on a soda-lime glass substrate, which deteriorated solar cell performance, particularly open circuit voltage. The optimum air-annealing temperature resulting in minimal carbon impurities, as well as Mo oxidation, was found to be around 350 °C, and the CIGS film synthesized with this optimum oxidation condition exhibited ~4% solar cell efficiency at standard irradiation conditions.
URI
http://pubs.kist.re.kr/handle/201004/43728
ISSN
00406090
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE