Effect of Precursor Ratio on the Structural Properties of ZnO Thin Films Deposited by Low Pressure MOCVD

Title
Effect of Precursor Ratio on the Structural Properties of ZnO Thin Films Deposited by Low Pressure MOCVD
Authors
H.-M. Kang정증현박종극이경석김원목H.-J. Choi백영준
Keywords
ZnO Thin Film; Texture; Light Trapping; Solar Cell
Issue Date
2012-04
Publisher
Journal of nanoscience and nanotechnology
Citation
VOL 12, NO 4, 3669-3672
Abstract
The effect of precursor ratio (H2O/DEZ) on the texture orientation, surface morphology, optical transparency and electrical resistivity of ZnO thin films deposited by MOCVD was investigated. Deposition temperature and pressure were fixed at 120 ℃ and 0.67 torr, respectively. The precursor ratio was varied between 0.1 and 4. It was found that the texture orientation changed from <0002> to <1120> with increase of the precursor ratio. <1120> textured film shows well facetted tetrapod like rough surface morphology, which scatters the incident light very effectively. The electrical resistivity was in the range of about 0.1 Ω cm in the undoped state, which was found to decrease with increase of the film thickness and decrease of the precursor ratio.
URI
http://pubs.kist.re.kr/handle/201004/43744
ISSN
15334880
Appears in Collections:
KIST Publication > Article
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