Fabrication of MoS2 Film-based Transistors with Graphene Electrodes
- Fabrication of MoS2 Film-based Transistors with Graphene Electrodes
- 박성익; 최진일; 정다운; 김성일; 김영환
- MoS2 film; Field effect transistor; graphene electrode
- Issue Date
- International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2012)
- Recently, researchs on two-dimensional materials have gathered much attention compared to one dimensional materials since it requires relatively simple fabrication process for generating complex structures. Graphene is the most widely studied two dimensional materials, credited to having exceptional physical properties and mechanical strength including exhibition of high electron conductivity. However, lack of a band gap in pristine graphene is one of the major limitations for the use in devices such as transistors. MoS2 single layers are reported to display large intrinsic band gap and therefore may be a better candidate than graphene for the use as an active material for fabrication of transistor devices. In this study, we propose fabrication of MoS2 film-based transistors with graphene electrodes. Mechanically exfoliated MoS2 films were prepared and deposited on the SiO2 substrate and graphene electrodes were patterned by photolithography. Atomic force microscopy and Raman spectroscopy were used to define single and multi-layers of MoS2 and photoluminescence was performed to confirm the existence of a band gap for monolayer MoS2. The transistor characteristics of the fabricated device were investigated.
- Appears in Collections:
- KIST Publication > Conference Paper
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.