The effect of post-growth thermal annealing on the emission spectra of GaAs/AlGaAs quantum dots grown by droplet epitaxy

Title
The effect of post-growth thermal annealing on the emission spectra of GaAs/AlGaAs quantum dots grown by droplet epitaxy
Authors
문필경J. D. Lee하승규E. H. Lee최원준송진동J. S. KimL. S. Dang
Keywords
droplet epitaxy; annealing; luminescence; quantum dots; GaAs; AlGaAs
Issue Date
2012-11
Publisher
Physica status solidi. Rapid Research Letters : PSS.
Citation
VOL 6, NO 11, 445-447
Abstract
We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy, and obtained the geometries of the dots by scanning transmission electron microscopy. Post-growth thermal annealing is essential for the optical activation of quantum dots grown by droplet epitaxy. We measured the emission energy shifts of the dots and the underlying superlattice by postgrowth thermal annealing, and specified the emission from dots by selectively etching the structure down to a low layer of quantum dots. We studied the influence of the degree of annealing on the optical properties of the dots from the peak shifts of the superlattice, since the superlattice has a uniform and well-defined geometry.
URI
http://pubs.kist.re.kr/handle/201004/43902
ISSN
18626254
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KIST Publication > Article
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