Investigation of Elemental Composition for Cu(InGa)Se2 Thin Films by Various Analytical Techniques
- Title
- Investigation of Elemental Composition for Cu(InGa)Se2 Thin Films by Various Analytical Techniques
- Authors
- 이지혜; 김선희; 윤정현; 원성옥; 이연희
- Keywords
- CIGS; ICP-OES; SIMS; solar cell; EPMA
- Issue Date
- 2012-10
- Publisher
- AVS 59th International Symposium
- Abstract
- Cu(InGa)Se2 (CIGS) solar cells are very promising films for use in photovoltaic devices, as they feature a high
absorption coefficient and a high conversion efficiency at a relatively low manufacturing cost. In order to develop
an efficient CIGS solar cell, the relative ratio of the major elements should be determined quantitatively. In this
study, a quantitative analysis of Cu(InGa)Se2 (CIGS) was performed using an electron probe micro analysis
(EPMA), x-ray fluorescence (XRF), inductively coupled plasma-optical emission spectrometry (ICP-OES), Auger
electron spectroscopy (AES), time-of-flight secondary ion mass spectrometry (TOF-SIMS), and dynamic
secondary ion mass spectrometry (dynamic SIMS). Surface roughness was observed by using atomic force
microscopy (AFM) to identify the effect of the surface roughness on the reproducibility of the measurements. The
relative sensitivity factors (RSF) of AES and SIMS were obtained by using ungraded CIGS thin film of known
composition as the standard sample. Quantitative analysis of several CIGS samples were performed using the
relative sensitivity factor (RSF) value calculated from the depth profile results of the standard film. The
Cu/(In+Ga) ratio and the Ga/(In+Ga) ratio of SIMS results are relatively reproducible and close to those of the
AES results. Overall, results from Composition of CIGS thin films by a variety of analytical methods were
compared and their discrepancies were interpreted.
- URI
- http://pubs.kist.re.kr/handle/201004/43930
- Appears in Collections:
- KIST Publication > Conference Paper
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