Near Infrared Single Photon Detector Using an InGaAs/InP Avalanche Photodiode Operated with a Bipolar Gating Signal

Title
Near Infrared Single Photon Detector Using an InGaAs/InP Avalanche Photodiode Operated with a Bipolar Gating Signal
Authors
보우지드박준범김세민문성욱
Issue Date
2012-03
Publisher
Japanese journal of applied physics
Citation
VOL 51, NO 3, 034401-1-034401-3
Abstract
We report a near infrared (NIR) single photon detector (SPD) using an InGaAs/InP avalanche photodiode (APD) operated with a bipolar rectangular gating signal. The use of the bipolar gating pulse enabled us to operate the APD well below the breakdown voltage during the gate-off time. As a result, it permits to decrease the lifetime of the trapped carriers, and then reduces the after-pulse noise of the detector. At a repetition rate of 200 MHz, the after-pulse probability is 8.2% less comparing to that of conventional gating signal SPD.
URI
http://pubs.kist.re.kr/handle/201004/44071
ISSN
00214922
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE