Near Infrared Single Photon Detector Using an InGaAs/InP Avalanche Photodiode Operated with a Bipolar Gating Signal
- Near Infrared Single Photon Detector Using an InGaAs/InP Avalanche Photodiode Operated with a Bipolar Gating Signal
- 보우지드; 박준범; 김세민; 문성욱
- Issue Date
- Japanese journal of applied physics
- VOL 51, NO 3, 034401-1-034401-3
- We report a near infrared (NIR) single photon detector (SPD) using an InGaAs/InP avalanche photodiode (APD) operated with a bipolar
rectangular gating signal. The use of the bipolar gating pulse enabled us to operate the APD well below the breakdown voltage during the gate-off
time. As a result, it permits to decrease the lifetime of the trapped carriers, and then reduces the after-pulse noise of the detector. At a repetition
rate of 200 MHz, the after-pulse probability is 8.2% less comparing to that of conventional gating signal SPD.
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