Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs

Title
Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs
Authors
라상호정지심정윤수정윤장김언기황은석박병건박태주최정혜황철성
Keywords
Amorphous; indium-gallium-zinc-oxide (a-IGZO); thin-film transistors (TFTs); transmission-line method (TLM)
Issue Date
2012-12
Publisher
IEEE transactions on electron devices
Citation
VOL 59, NO 12, 3357-3363
Abstract
The transmission-line method (TLM) was adopted to clarify the causes of device performance variation according to the source/drain metal electrode and device structure of a thinfilm transistor using an amorphous indium–gallium–zinc-oxide channel. Using the TLM, the channel characteristics independent of contact resistance were extracted for the two different contact metals, i.e., Ti and Mo. Based on these results, the mobility characteristics were compared in terms of device scaling and contact structure in the source/drain overlap region. In addition, the transport characteristics according to the contact structure of the source/drain metal electrode were investigated in detail and reproduced using the simulation model.
URI
http://pubs.kist.re.kr/handle/201004/44123
ISSN
00189383
Appears in Collections:
KIST Publication > Article
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