Molecular Weight-Dependent Self-Assembly and Its Charge Transport of Well-Defined Poly(3-alkyl thiophene)s
- Molecular Weight-Dependent Self-Assembly and Its Charge Transport of Well-Defined Poly(3-alkyl thiophene)s
- 장미; 이윤재; 백경열; 양회창
- Issue Date
- ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY
- VOL 107, 306-307
- Conjugated semicrystalline polymers are emerging materials for electronic applications due to the tunability of their properties through variation of their chemical structure. Their applications, which currently include light-emitting diodes (LEDs), field effect transistors (FETs), photovoltaics (PVs), and sensors, are expanding to many new areas.[1-4] The two critical parameters that determine the function of conjugated polymer-based devices are chemical and morphological structures of a π-conjugated polymer in the solid state. The development of effective and precise methods for controlling the self-assembly of -conjugated polymers into the solid state has been limited, resulting from their amorphous characters: high-molecular weight (Mw), broad molecular weight Distribution (MWD), and small portion of region-random chain sequence. The amorphous character prevents the polymers from organizing into a controlled structure by solution film procedures.
Alkyl-substituted polythiophene is one of the leading candidates for the solution-processable OFET applications. In particular, the morphology and charge-carrier mobility correlation has been extensively studied for regioregular poly(3-hexyl thiophene) (RR PHT) films, because of its high field-effect mobilities (µFET, 0.010.1 cm2V/s) in OFETs. RR PHT tends to grow into one-dimensional (1D) nanofibrils with highly ordered conjugated structures of ‘edge-on’ molecules with respect to the substrate. Kline et al. reported that µFET values of RR PHT-based OFETs significantly depended on Mws of RR PHT: During a spin-cast film processing, low-Mw RR PHT tends to show highly crystalline but short nanorods, while high-Mw (> 30 kDa based on MALDI-TOF-MASS) showed featureless crystal structure. However, µFET values of the high-Mw PHT-based OFETs could be improved up to four orders of magnitude, in comparison to those of the low-Mw ones.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.