Solution processed high band-gap CuInGaS2 thin film for solar cell applications

Title
Solution processed high band-gap CuInGaS2 thin film for solar cell applications
Authors
박세진민병권
Keywords
High band-gap; CIGS; CuInGaS2; Solution process; Solar cells
Issue Date
2012-11
Publisher
Global photovolatic Conrerence 2012
Abstract
A high band-gap (~1.55 eV) chalcopyrite compound film (CuInGaS2) was synthesized by a precursor solution based coating method with heat treatment process. In order to eliminate carbon residue derived from organic binder and solvent, air annealing was applied. Subsequently, sulfurization was carried out for the formation of the CuInGaS2 alloy. The film revealed two distinct morphologies: a densely packed bulk layer and a rough surface layer. We found that the rough surface is caused by the formation of Ga deficient CuInGaS2 crystallites. Although two distinct morphologies coexisted on the surface, the film showed good device performance. Due to the high band-gap optical property of the CuInGaS2 absorber film, a solar cell device with this film showed a relatively high open circuit voltage (~787 mV) with a power conversion efficiency of 8.28 % under standard irradiation conditions.
URI
http://pubs.kist.re.kr/handle/201004/44199
Appears in Collections:
KIST Publication > Conference Paper
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