Nano Boron Nitride CVD Synthesis and Properties

Title
Nano Boron Nitride CVD Synthesis and Properties
Authors
김명종
Keywords
Nano; Boron Nitride
Issue Date
2012-11
Publisher
한국공업화학회
Abstract
Low-dimensional nanostructures exhibit quantum confinement which leads to unique electronic properties, making them attractive as the active elements for nanoscale electronic devices. As 1-dimensional nanomaterials, Boron nitride (BN) nanotubes are of particular interest since, unlike carbon nanotubes, all chiralities are semiconducting. We will report a synthesis based on the use of low pressures of the molecular precursor borazine, in conjunction with a floating nickelocene catalyst which results in the formation of double-walled boron nitride nanotubes. By analogy to carbon nanotube growth, the development of a catalytic chemical vapor deposition (CCVD) method such as this has the potential for creating high quality boron nitride nanostructures with high production volumes. As an analogy of 2-dimensional graphene, white graphene, which is hexagonal boron nitride (h-BN), has become an issue these days. Synthesis methods and properties of h-BN will be also discussed as an extension of BN nanotubes.
URI
http://pubs.kist.re.kr/handle/201004/44228
Appears in Collections:
KIST Publication > Conference Paper
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