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dc.contributor.author김효진-
dc.contributor.author박경원-
dc.contributor.author장혜정-
dc.contributor.author이건재-
dc.contributor.author이재철-
dc.contributor.author안재평-
dc.date.accessioned2015-12-03T00:55:04Z-
dc.date.available2015-12-03T00:55:04Z-
dc.date.issued201202-
dc.identifier.other38969-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/44276-
dc.description.abstractOptimum heat-sink materials of LED devices have been expected to improve using LED’s life-time. Low thermal conductivity and high thermal expansion of the heat-sink materials cause bad efficiency and become a main reason to reduce life-time. Although Al is a good material for heat-sink applications, it has high thermal expansion coefficient. Therefore it needs complex composite with low thermal expansion such as AlN and Si3N4. In this study, we try to manufacture Al-AlN composites with high thermal conductivity and low thermal expansion coefficient. In particular, the formation mechanism of AlN was investigated with the role of Mg catalyst and the processing temperature.-
dc.publisherACCMM@@/ICON2012/APMC 10 2012-
dc.subjectLED-
dc.subjectThermal conductivity-
dc.subjectLow thermal expansion-
dc.titleAl-AlN composite manufactured by gas reaction method for high thermal conductivity and low thermal expansion-
dc.typeConference Paper-
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