The Impact of Carbon Concentration on the Crystalline Phase and Dielectric Constant of Atomic Layer Deposited HfO2 Films on Ge Substrate

Title
The Impact of Carbon Concentration on the Crystalline Phase and Dielectric Constant of Atomic Layer Deposited HfO2 Films on Ge Substrate
Authors
정형석전상호김효겸유일혁이상영이주휘정윤장조덕용이내인박태주최정혜한승우황철성
Keywords
HfO2; Ge Substrate; Carbon Concentration
Issue Date
2012-07
Publisher
ECS Journal of Solid State Science and Technology
Citation
VOL 1, NO 2, N33-N37
Abstract
The effect of the carbon concentration on the crystalline phase and dielectric constant (k) of atomic layer deposited HfO2 films on Ge substrate was investigated. After annealing, the HfO2 films grown at 200◦C and 280◦C were crystallized to the tetragonal (t) and monoclinic (m) phases, respectively, which was related to the carbon contents within the films and grain boundary energy. To clarify this, the energy difference between a t- and a m- phases ( Etetra) was calculated by first principles calculations. The higher k value of t-HfO2 compared to amorphous and monoclinic HfO2 was experimentally confirmed.
URI
http://pubs.kist.re.kr/handle/201004/44347
ISSN
21628777
Appears in Collections:
KIST Publication > Article
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