Enhancement of electrical properties in Al-doped ZnO films by tuning dc bias voltage during radio frequency magnetron sputtering

Title
Enhancement of electrical properties in Al-doped ZnO films by tuning dc bias voltage during radio frequency magnetron sputtering
Authors
노영수박동희김태환최지원B. Angadi최원국
Keywords
Al-doped ZnO; rf magnetron sputtering; dc bias; tensile stress; Electrical properties; Structural properties; Al doped zinc oxide; sputtering; Transparent
Issue Date
2012-12
Publisher
Current applied physics
Citation
VOL 12, S71-S75
Abstract
Al-doped ZnO (AZO) thin films were deposited at room temperature on glass substrates by rf magnetron sputtering with simultaneous dc bias through an external inductor coil. The deposition rates of AZO films deposited using simultaneous rf and dc power along with an inductor coil were 20% higher than those deposited using only rf power. The effects of simultaneous rf and dc bias voltage during the deposition of AZO films were investigated in terms of their resistivity and compressive stress. It was observed that the AZO films deposited at 120 W rf power with 600 μH inductor coil exhibit the lowest resistivity of 6.71 x 10-4 Ωㆍcm.
URI
http://pubs.kist.re.kr/handle/201004/44375
ISSN
15671739
Appears in Collections:
KIST Publication > Article
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