Defect scattering in graphene

Title
Defect scattering in graphene
Authors
J. H. ChenW. G. Cullen장차운M. S .FuhrerE. D. Williams
Issue Date
2009-06
Publisher
Physical review letters
Citation
VOL 102, NO 23, 236805-1-236805-4
Abstract
Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as is evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier density, with mobility decreasing as the inverse of the ion dose. The mobility decrease is 4 times larger than for a similar concentration of singly charged impurities. The minimum conductivity decreases proportional to the mobility to values lower than 4e2/πh, the minimum theoretical value for graphene free of intervalley scattering. Defected graphene shows a diverging resistivity at low temperature, indicating insulating behavior. The results are best explained by ion-induced formation of lattice defects that result in midgap states.
URI
http://pubs.kist.re.kr/handle/201004/44465
ISSN
00319007
Appears in Collections:
KIST Publication > Article
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