Defect scattering in graphene
- Defect scattering in graphene
- J. H. Chen; W. G. Cullen; 장차운; M. S .Fuhrer; E. D. Williams
- Issue Date
- Physical review letters
- VOL 102, NO 23, 236805-1-236805-4
- Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley
scattering as is evident from a significant Raman D band intensity. The defect scattering gives a
conductivity proportional to charge carrier density, with mobility decreasing as the inverse of the ion
dose. The mobility decrease is 4 times larger than for a similar concentration of singly charged impurities.
The minimum conductivity decreases proportional to the mobility to values lower than 4e2/πh, the
minimum theoretical value for graphene free of intervalley scattering. Defected graphene shows a
diverging resistivity at low temperature, indicating insulating behavior. The results are best explained
by ion-induced formation of lattice defects that result in midgap states.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.