Transport of perpendicular spin in a semiconductor channel via a fully electrical method

Title
Transport of perpendicular spin in a semiconductor channel via a fully electrical method
Authors
배주형김경호한정민구현철민병철김형준장준연한석희임상호
Keywords
perpendicular spin; spin injection; Hanle effect
Issue Date
2013-02
Publisher
Applied physics letters
Citation
VOL 102, NO 6, 062412-1-062412-4
Abstract
The transport of perpendicular spins in a GaAs channel is investigated via a fully electrical method. A Tb20Fe62Co18/Co40Fe40B20/MgO contact is used to inject perpendicular spin into the GaAs channel, where the Tb20Fe62Co18 layer produces perpendicular magnetization and the Co40Fe40B20 layer enhances the spin polarization of the injection current. By measuring the three-terminal Hanle effect with an in-plane field, we obtained a spin signal of 0.65Ω (0.04Ω) and a spin lifetime of 0.30 ns (0.17 ns) at 1.8 K (300 K). The observed spin signal with a MgO barrier is more than double of that without a MgO barrier.
URI
http://pubs.kist.re.kr/handle/201004/44520
ISSN
00036951
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KIST Publication > Article
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