Magnetic-field-controlled reconfigurable semiconductor logic

Title
Magnetic-field-controlled reconfigurable semiconductor logic
Authors
주성중김태엽신상훈임주영홍진기송진동장준연이현우이긍원한석희신경호Mark Johnson
Keywords
reconfigurable semiconductor logic; impact ionization; avalanche diode; InSb; boolean operation; magnetic field control; Lorentz force
Issue Date
2013-02
Publisher
Nature
Citation
VOL 494, 72-76
Abstract
Logic devices based on magnetism show promise for increasing computational efficiency while decreasing consumed power. They offer zero quiescent power and yet combine novel functions such as programmable logic operation and non-volatile built-in memory1–5. However, practical efforts to adapt a magnetic device to logic suffer from a low signal-to-noise ratio and other performance attributes that are not adequate for logic gates. Rather than exploiting magnetoresistive effects that result fromspin-dependent transport of carriers, we have approached the development of a magnetic logic device in a different way: we use the phenomenon of large magnetoresistance found in non-magnetic semiconductors in high electric fields6,7. Here we report a device showing a strong diode characteristic that is highly sensitive to both the sign and the magnitude of an external magnetic field, offering a reversible change between two different characteristic states by the application of a magnetic field. This feature results from magnetic control of carrier generation8 and recombination in an InSb p–n bilayer channel9. Simple circuits combining such elementary devices are fabricated and tested, and Boolean logic functions including AND, OR, NAND and NOR are performed. They are programmed dynamically by external electric or magnetic signals, demonstrating magnetic-field-controlled semiconductor reconfigurable logic at room temperature. This magnetic technology permits a new kind of spintronic device, characterized as a current switch rather than a voltage switch, and provides a simple and compact platform for non-volatile reconfigurable logic devices.
URI
http://pubs.kist.re.kr/handle/201004/44557
ISSN
00280836
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KIST Publication > Article
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