Study of a-Plane GaN Epitaxial Lateral Overgrowth Using Carbonized Photoresist Mask on r-Plane Sapphire

Title
Study of a-Plane GaN Epitaxial Lateral Overgrowth Using Carbonized Photoresist Mask on r-Plane Sapphire
Authors
장삼석이도한권준혁김상일임소영이재상박지훈변동진
Keywords
ELOG; Carbonized PR; MOCVD
Issue Date
2012-11
Publisher
Japanese journal of applied physics
Citation
VOL 51, NO 11, 115501-1-115501-4
Abstract
Epitaxial lateral overgrowth (ELO) a-plane GaN samples were successfully grown on masked sapphire (1102) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO process were prepared using conventional lithography in the form of a stripe with an opening of 4 &micro;m and a period of 12 &micro;m. The stripe-patterned PR was annealed at 1100 °C in a H2 atmosphere. The stripes were aligned parallel to the <1100>GaN direction. The ELO process of GaN was strongly dependent on the direction of the stripes. Overall, the PR masks on the r-plane sapphire substrate were carbonized during the heating step before the main growth, so that the carbonized PR mask acted as an ELO mask. The study results confirmed the promising potential of the ELO process using an in-situ carbonized PR mask on r-plane sapphire.
URI
http://pubs.kist.re.kr/handle/201004/44593
ISSN
00214922
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE