Composition Control of a Light Absorbing Layer of CuInSe2 Thin Film Solar Cells Prepared by Electrodeposition
- Composition Control of a Light Absorbing Layer of CuInSe2 Thin Film Solar Cells Prepared by Electrodeposition
- 박영일; 김동완; 서경원; 정증현; 김홍곤
- CIS thin film solar cell; selenization; CuInSe2; Copper indium diselenide; Electrodeposition; Post-annealing
- Issue Date
- 전기전자재료학회논문지 (Journal of KIEEME)
- VOL 26, NO 3, 232-239
- Thin light-active layers of the CuInSe2 solar cell were prepared on Mo-coated sodalime glass
substrates by one-step electrodeposition and post-annealing. The structure, morphology, and composition of
CuInSe2 film could be controlled by deposition parameters, such as the composition of metallic precursors,
the concentration of complexing agents, and the temperature of post-annealing with elemental selenium. A
dense and uniform Cu-poor CuInSe2 film was successfully obtained in a range of parametric variation of
electrodeposition with a constant voltage of –0.5 V vs. a Ag/AgCl reference electrode. The post-annealing
of the film at high temperature above 500℃ induced crystallization of CuInSe2 with well-developed grains.
The KCN-treatment of the annealed CuInSe2 films further induced Cu-poor CuInSe2 films without secondary
phases, such as Cu2Se. The structure, morphology, and composition of CuInSe2 films were compared with
respect to the conditions of electrodeposition and post-annealing using SEM, XRD, Raman, AES and EDS
analysis. And the conditions for preparing device-quality CuInSe2 films by electrodeposition were proposed.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.