Effects of Surface Chemical Structure on the Mechanical Properties of Si1-xGex Nanowires
- Effects of Surface Chemical Structure on the Mechanical Properties of Si1-xGex Nanowires
- 마진원; W.J. Lee; W.J. Lee; K.S. Jeong; Y.S. Kang; M.H. Cho; 서종현; 안재평; K.B. Chung; J. Y. Song
- nanowire; nano manipulator; fracture strength; passivation; defect; SiGe; mechanical
- Issue Date
- Nano letters
- VOL 13, NO 3, 1118-1125
- The Young’s modulus and fracture strength of Si1−xGex
nanowires (NWs) as a function of Ge concentration were measured from
tensile stress measurements. The Young’s modulus of the NWs decreased
linearly with increasing Ge content. No evidence was found for a linear
relationship between the fracture strength of the NWs and Ge content, which is
closely related to the quantity of interstitial Ge atoms contained in the wire.
However, by removing some of the interstitial Ge atoms through rapid thermal
annealing, a linear relationship could be produced. The discrepancy in the
reported strength of Si and Ge NWs between calculated and experimented
results could be related to SiO2−x/Si interfacial defects that are found in Si1−xGex
NWs. It was also possible to significantly decrease the number of interfacial defects in the NWs by incorporating a surface
passivated Al2O3 layer, which resulted in a substantial increase in fracture strength.
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