Growth and Thermoelectric Properties of Multilayer Thin Film of Bismuth Telluride and Indium Selenide via RF Magnetron Sputtering
- Growth and Thermoelectric Properties of Multilayer Thin Film of Bismuth Telluride and Indium Selenide via RF Magnetron Sputtering
- 김효정; 김광천; 최원철; 김진상; 김영환; 김성일; 박찬
- Bismuth Telluride; Indium Selenide; Multilayer Thin Film; RF Magnetron Sputtering; Thermoelectric Films
- Issue Date
- Journal of nanoscience and nanotechnology
- VOL 12, NO 4, 3629-3632
- A bismuth telluride (BT)/indium selenide (IS) multilayer film was deposited at room temperature
by rf magnetron sputtering on a sapphire substrate in order to investigate how the multilayered
structure affects the microstructure and thermoelectric properties. The effect of annealing at different
temperatures was also studied. The results were compared with those from a BT film with the same
thickness. A TEM study showed that the interface between the BT and IS layers became vague as
the annealing temperature increased, and the BT layer crystallized while the IS layer did not. The
presence of thin IS layers can help to limit the evaporation of Te from the BT/IS multilayer film, thus
increasing the amount of Bi2Te3 phase in the multilayer film as compared with that of the BT film.
An abrupt increase in the Seebeck coefficient of the multilayer film was observed when annealed at
300 ℃, and the resistivity of the annealed multilayer film was high compared to that of the BT film.
This result can also be explained by the proposed role of the IS layer, which limits the evaporation
of Te at high temperature. The highest power factor of ~3.9×10−6 W/K2 cm was obtained at room
temperature from the multilayer film annealed at 300 ℃.
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