Improving the composition uniformity of Au-catalyzed InGaAs nanowires on silicon

Title
Improving the composition uniformity of Au-catalyzed InGaAs nanowires on silicon
Authors
Jae Cheol ShinDo Yang KimAri LeeHyo Jin Kim김재헌최원준Hyun-Seok KimKyoung Jin Choi
Keywords
InGaAs nanowires; Composition Uniformity; InGaAs on Silicon; Nanostructures; Metalorganic vapor phase epitaxy; Nanomaterials; Semiconducting III-V materials
Issue Date
2013-06
Publisher
Journal of crystal growth
Citation
VOL 372, 15-18
Abstract
Spatial distribution of indium (In) atoms in ternary InxGa1−xAs nanowires (NWs) was investigated by the energy-dispersive X-ray spectroscopy, which were grown on Si (111) by metal-organic chemical vapor deposition. The NWs have a tapered morphology with thicker diameter and higher In composition in the bottom of NWs. However, decreasing growth temperature and V/III ratio resulted in straight NWs with constant In composition throughout the NWs. This was attributed to enhanced deposition on the sidewall of the NW with higher In composition through the vapor–solid mode, leading to a core-shell structure consisting of low and high In-content layers.
URI
http://pubs.kist.re.kr/handle/201004/44693
ISSN
00220248
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KIST Publication > Article
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