Improving the composition uniformity of Au-catalyzed InGaAs nanowires on silicon
- Improving the composition uniformity of Au-catalyzed InGaAs nanowires on silicon
- Jae Cheol Shin; Do Yang Kim; Ari Lee; Hyo Jin Kim; 김재헌; 최원준; Hyun-Seok Kim; Kyoung Jin Choi
- InGaAs nanowires; Composition Uniformity; InGaAs on Silicon; Nanostructures; Metalorganic vapor phase epitaxy; Nanomaterials; Semiconducting III-V materials
- Issue Date
- Journal of crystal growth
- VOL 372, 15-18
- Spatial distribution of indium (In) atoms in ternary InxGa1−xAs nanowires (NWs) was investigated by the energy-dispersive X-ray spectroscopy, which were grown on Si (111) by metal-organic chemical vapor deposition. The NWs have a tapered morphology with thicker diameter and higher In composition in the bottom of NWs. However, decreasing growth temperature and V/III ratio resulted in straight NWs with constant In composition throughout the NWs. This was attributed to enhanced deposition on the sidewall of the NW with higher In composition through the vapor–solid mode, leading to a core-shell structure consisting of low and high In-content layers.
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