Structural Characteristics of Ternary InxGa1-xAs Nanowires on Si (111) Grown via Au-Catalyzed VLS

Title
Structural Characteristics of Ternary InxGa1-xAs Nanowires on Si (111) Grown via Au-Catalyzed VLS
Authors
Jae Cheol ShinDo Yang KimJae Hyung ParkSi Duck OhHang Ju KoMyung-Soo Han김재헌Kyoung Jin ChoiHyo Jin Kim
Keywords
InGaAs Nanowire on Si; Au-catalyzed VLS; structural characteristics; InxGa1-xAs
Issue Date
2013-05
Publisher
Journal of nanoscience and nanotechnology
Citation
VOL 13, NO 5, 3511-3514
Abstract
We have characterized the structural properties of the ternary InxGa1−xAs nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the InxGa1−xAs NW array grown under optimized condition exceeds 1 × 108/cm2. X-ray diffraction (XRD) spectra confirm the In composition (x = 0.9-0.3) of the InxGa1−xAs nanowires which bandgap energy can cover the entire near-infrared (NIR) range. Massive stacking faults and twin planes were observed but no misfit dislocation was found along the NWs as confirmed by transmission electron microscopy (TEM). The energy-dispersive X-ray spectroscopy (EDS) analysis shows the gradual variation of In composition along the NW.
URI
http://pubs.kist.re.kr/handle/201004/44730
ISSN
15334880
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