Droplet epitaxy 법을 이용한 GaAs quantum ring 형성
- Droplet epitaxy 법을 이용한 GaAs quantum ring 형성
- 이은혜; 송진동; 김지훈; 김수연; 배민환; 연규혁; 김준영; 한일기; 장수경; 김종수
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- GaAs quantum rings were grown on Al0.3Ga0.7As/GaAs substrates by droplet epitaxy. Growth conditions such as As4 beam equivalent flux (BEF) and As4 injection temperature were changed to observe a trend of formation of surface GaAs rings. With decrease of As4 BEF, dome shape of GaAs nanostructures was changed into ring-like shape. Relatively symmetrical geometry of rings was observed at higher As4 injection temperature. At As4 injection temperature of 321 ℃, change of As4 BEF caused shape transition from conventional ring to ring on disk. Emission peaks of photoluminescence of GaAs quantum rings were shown in the wavelength range of 750 ~ 800 nm.
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