Droplet epitaxy 법을 이용한 GaAs quantum ring 형성

Title
Droplet epitaxy 법을 이용한 GaAs quantum ring 형성
Authors
이은혜송진동김지훈김수연배민환연규혁김준영한일기장수경김종수
Issue Date
2013-02
Publisher
한국반도체학술대회
Abstract
GaAs quantum rings were grown on Al0.3Ga0.7As/GaAs substrates by droplet epitaxy. Growth conditions such as As4 beam equivalent flux (BEF) and As4 injection temperature were changed to observe a trend of formation of surface GaAs rings. With decrease of As4 BEF, dome shape of GaAs nanostructures was changed into ring-like shape. Relatively symmetrical geometry of rings was observed at higher As4 injection temperature. At As4 injection temperature of 321 ℃, change of As4 BEF caused shape transition from conventional ring to ring on disk. Emission peaks of photoluminescence of GaAs quantum rings were shown in the wavelength range of 750 ~ 800 nm.
URI
http://pubs.kist.re.kr/handle/201004/44736
Appears in Collections:
KIST Publication > Conference Paper
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