Effect of Indium-Tin-Oxide Schottky Contact on the Resistance Switching of NiO Film
- Effect of Indium-Tin-Oxide Schottky Contact on the Resistance Switching of NiO Film
- 노영수; 박동희; 이전국; 이연승; 김태환; 최원국
- Issue Date
- Japanese journal of applied physics
- VOL 52, NO 5, 051102-1-051102-5
- The effect of electrode materials on resistance switching was evaluated on the Pt/NiO/electrode (EL) structures where the EL contacts were Pt,
Al, and indium–tin-oxide (ITO). It was confirmed that ohmic Pt contact needs to induce the effective electric field for resistance switching across
the NiO film. For the Pt/NiO/Al structure, the barrier height of the Al Schottky contact was measured as 0.66 eV and no resistance switching was
observed owing to a large voltage drop at the rectifying interface induced by the reduction of NiO resulting from the formation of Al oxide. In the
ITO (EL)/NiO/Pt structure, the barrier height of the Schottky contact between ITO and NiO was about 0.52 eV and it did not show any resistance
switching, either. Through the depth-profile study by X-ray photoelectron spectroscopy, chemical reactions at the interface ITO/NiO was identified
to be not too much evolved compared with that of NiO/Al, which might due to be abundant oxygen on the ITO surface. Such Schottky barrier
heights 0.52–0.66 eV were considered too high to induce a sufficient electric field in the NiO film causing the resistance switching.
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