Coherent scattering stereoscopic microscopy for mask inspection of extreme ultra-violet lithography
- Coherent scattering stereoscopic microscopy for mask inspection of extreme ultra-violet lithography
- 김기혁; 조정근; 박민철; 주병권; 조성진; 손정영
- extreme ultraviolet lithography; mask inspection; stereoscopic; microscopy
- Issue Date
- SPIE Defense Security and Sensing
- Recently, mask inspection for extreme ultraviolet lithography has been in the spotlight as the next-generation lithography
technique in the field of semiconductor production. This technology is used to make semiconductors more delicate even
as they become tinier. In mask inspection, defect sizes and locations are major factors for aggravating mask defects
which cause errors on wafer patterns. This paper addresses a simulated solution of coherent scattering stereoscopic
microscopy for considering the mitigation of mask defects. To perform the inspection of mask defects for the
stereoscopic microscopy, we construct a stereo aerial image with a disparity map produced by a Hybrid input-output
algorithm and disparity estimation methods. Preliminary results show that mask inspection by coherent scattering
stereoscopic microscopy is expected to be performed in a more accurate way compared to 2D mask inspection.
- Appears in Collections:
- KIST Publication > Conference Paper
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.