Correlation between crystallinity, charge transport, and electrical stability in an ambipolar polymer field-effect transistor based on poly(naphthalene-alt-diketopyrrolopyrrole)
- Correlation between crystallinity, charge transport, and electrical stability in an ambipolar polymer field-effect transistor based on poly(naphthalene-alt-diketopyrrolopyrrole)
- 김범준; 이효상; 이중석; 조상혁; 김현정; 손해정; 김홍곤; 고민재; 박성남; 강문성; 오세영; 김봉수; 조정호
- Polymer field-effect transistors; Low band gap polymers; Ambipolar transistors; Electrical stability; Crystalline; High carrier mobility
- Issue Date
- The Journal of Physical Chemistry C
- VOL 117, NO 22, 11479-11486
- We characterized the electrical properties of ambipolar polymer field-effect transistors (PFETs) based on the low-band-gap polymer, pNAPDO-DPP-EH. The polymer consisted of electron-rich 2,6-di(thienyl)naphthalene units with decyloxy chains (NAPDO) and electron-deficient diketopyrrolopyrrole units with 2-ethylhexyl chains (DPP-EH). The as-spun pNAPDO-DPP-EH PFET device exhibited ambipolar transport properties with a hole mobility of 3.64 × 10–3 ㎠ /(V s) and an electron mobility of 0.37 × 10–3 ㎠ /(V s). Thermal annealing of the polymer film resulted in a dramatic increase in the carrier mobility. Annealing at 200 °C yielded hole and electron mobilities of 0.078 and 0.002 ㎠ /(V s), respectively. The mechanism by which the mobility had improved was investigated via grazing incidence X-ray diffraction studies, atomic force microscopy, and temperature-dependent transport measurements. These results indicated that thermal annealing improved the polymer film crystallinity and promoted the formation of a longer-range lamellar structure that lowered the thermal activation energy for charge hopping. Thermal annealing, moreover, reduced charge trapping in the films and thus improved the electrical stability of the PFET device. This work underscores the fact that long-range ordering in a crystalline polymer is of great importance for efficient charge transport and high electrical stability.
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