Design and Fabrication of 1.35-μm Laser Diodes With Full Digital-Alloy InGaAlAs MQW

Title
Design and Fabrication of 1.35-μm Laser Diodes With Full Digital-Alloy InGaAlAs MQW
Authors
허두창송진동한일기최원준이용탁
Keywords
Digital alloy technique; laser diode; molecular beam epitaxy; short-period superlattice
Issue Date
2013-01
Publisher
IEEE journal of quantum electronics
Citation
VOL 49, NO 1, 24-30
Abstract
We report full digital-alloy In(Ga1−zAlz)As/InP multiple-quantum well 1.35-μm laser diodes using molecular beam epitaxy. The wells and barriers consist of five pairs of InGaAs/InAlAs (1.5 nm/0.375 nm) and four pairs of InGaAs/InAlAs (0.66 nm/0.98 nm). The separate confinement layer consists of two 60 pairs of InGaAs/InAlAs (0.66 nm/0.98 nm) and makes for an optical confinement factor of 7.07%. We obtained a continuous wave of 200 mW from a single cleaved facet of 1.6-mm long broad area LDs, with 100-μm aperture width at 10 °C, and high characteristic temperature T0 of 70 K. In this paper, we find that, with the MBE, the full digital-alloy technique makes bandgap engineering possible through the entire LD structure with only InGaAs/InAlAs shortperiod superlattices pairs.
URI
http://pubs.kist.re.kr/handle/201004/45065
ISSN
00189197
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