Growth and Spectral Analysis of Stacked Quantum Dots for Broadband Superluminescent Diodes

Title
Growth and Spectral Analysis of Stacked Quantum Dots for Broadband Superluminescent Diodes
Authors
박문호박성준송진동최원준Kwang Woong KimJu Young LimYoo Jong LeeJung Ho Park
Keywords
Quantum dot; Stacked quantum dots; Superluminescent; Broad spectrum
Issue Date
2013-02
Publisher
Journal of the Korean Physical Society
Citation
VOL 62, NO 4, 595-600
Abstract
Stacks of different quantum dot (QD) structures were adopted and characterized for broadband superluminescent diodes (SLDs). Each QD structure in the stacked QD structures exhibited a unique peak in the photoluminescence (PL) spectrum, showing ground-state peaks of ~1272, ~1185 and ~1090 nm for InGaAs-capped InAs QDs, InAs QDs, and InGaAs QDs, respectively. Two SLD structures, one with the stack of InGaAs-capped InAs QDs, InAs QDs, and InGaAs QDs and the other with the stack of InGaAs-capped InAs QDs and InAs QDs, were grown and fabricated into devices. The SLDs with a stack of three different QD structures and with a stack of two different QD structures showed spectral bandwidths of 173.6 nm and 188.2 nm, respectively, in the electroluminescence (EL) measurements. The larger spectral bandwidth of the SLD with three different QD structures is thought to be due to the addition of the short-wavelength-emitting InGaAs QD structure. We analyzed the sub-peaks in the EL spectra of the SLD structures and suggested the stacking of QD structures to get broadband SLDs.
URI
http://pubs.kist.re.kr/handle/201004/45067
ISSN
03744884
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE