Interband transitions and dielectric functions of InGaSb alloys

Title
Interband transitions and dielectric functions of InGaSb alloys
Authors
김태중윤재진변준석황순용D. E. Aspnes신상훈송진동C.-T. LiangY.-C.Chang닐리쉬김준영김영동
Issue Date
2013-03
Publisher
Applied physics letters
Citation
VOL 102, NO 10, 102109-1-102109-4
Abstract
We report pseudodielectric functions of In1−xGaxSb ternary alloy films from 1.5 to 6.0 eV determined by spectroscopic ellipsometry. Artifacts were minimized by real-time assessment of overlayer removal, leading to accurate representations of the bulk dielectric responses of these materials. Critical-point (CP) energies were obtained from numerically calculated second energy derivatives, and their Brillouin-zone origins identified by band-structure calculations. The E2′ and E2 + Δ2 CP energies cross with increasing In content as a result of increasing spin-orbit splitting Δ2.
URI
http://pubs.kist.re.kr/handle/201004/45068
ISSN
00036951
Appears in Collections:
KIST Publication > Article
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