Delayed emission from InGaAs/GaAs quantum dots grown by migration-enhanced epitaxy due to carrier localization in a wetting layer

Title
Delayed emission from InGaAs/GaAs quantum dots grown by migration-enhanced epitaxy due to carrier localization in a wetting layer
Authors
C. S. AnY. D. JangH. LeeD. Lee송진동최원준
Issue Date
2013-05
Publisher
Journal of applied physics
Citation
VOL 113, NO 17, 173503-1-173503-4
Abstract
Wetting layer (WL) photoluminescence (PL) at 10K dominated the PL spectra of low-density quantum dots (QDs) grown by migration-enhanced epitaxy (MEE), even at very low excitation powers. Long PL rise time at the ground state (GS) of QDs was observed, when carriers are generated in the WL, indicating suppressed carrier capture from the WL into the QDs. Fluctuations in the WL thickness due to WL thinning in the MEE-grown QDs produced strong localization effects. Temperature dependence of the WL PL intensity and the GS PL rise time agreed well with this interpretation.
URI
http://pubs.kist.re.kr/handle/201004/45070
ISSN
00218979
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