Delayed emission from InGaAs/GaAs quantum dots grown by migration-enhanced epitaxy due to carrier localization in a wetting layer
- Delayed emission from InGaAs/GaAs quantum dots grown by migration-enhanced epitaxy due to carrier localization in a wetting layer
- C. S. An; Y. D. Jang; H. Lee; D. Lee; 송진동; 최원준
- Issue Date
- Journal of applied physics
- VOL 113, NO 17, 173503-1-173503-4
- Wetting layer (WL) photoluminescence (PL) at 10K dominated the PL spectra of low-density
quantum dots (QDs) grown by migration-enhanced epitaxy (MEE), even at very low excitation
powers. Long PL rise time at the ground state (GS) of QDs was observed, when carriers are
generated in the WL, indicating suppressed carrier capture from the WL into the QDs. Fluctuations in the WL thickness due to WL thinning in the MEE-grown QDs produced strong localization
effects. Temperature dependence of the WL PL intensity and the GS PL rise time agreed well with this interpretation.
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