Wafer-Scale Production of Uniform InAsyP1-y Nanowire Array on Silicon for Heterogeneous Integration

Title
Wafer-Scale Production of Uniform InAsyP1-y Nanowire Array on Silicon for Heterogeneous Integration
Authors
Jae Cheol ShinAri LeeParsian Katal Mohseni김도양Lan Yu김재헌Hyo Jin Kim최원준Daniel WassermanKyoung Jin ChoiXiuling Li
Keywords
Nanowire array; silicon; heterogeneous integration
Issue Date
2013-06
Publisher
ACS Nano
Citation
VOL 7, NO 6, 5463-5471
Abstract
One-dimensional crystal growth allows the epitaxial integration of compound semiconductors on silicon (Si), as the large lattice-mismatch strain arising from heterointerfaces can be laterally relieved. Here, we report the direct heteroepitaxial growth of a mixed anion ternary InAsyP1–y nanowire array across an entire 2 in. Si wafer with unprecedented spatial, structural, and special uniformity across the entire 2 in. wafer and dramatic improvements in aspect ratio (>100) and area density (>5 × 108/cm2). Heterojunction solar cells consisting of n-type InAsyP1–y (y = 0.75) and p-type Si achieve a conversion efficiency of 3.6% under air mass 1.5 illumination. This work demonstrates the potential for large-scale production of these nanowires for heterogeneous integration of optoelectronic devices.
URI
http://pubs.kist.re.kr/handle/201004/45075
ISSN
19360851
Appears in Collections:
KIST Publication > Article
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