Hall Mobility Manipulation in TiO2-x Semiconductor Films by Hydrogen-ion Irradiation

Title
Hall Mobility Manipulation in TiO2-x Semiconductor Films by Hydrogen-ion Irradiation
Authors
여창수정권범송종한채근화박진성송진호박상한조만호
Keywords
Ion irradiation; TiO2-x; Hydrogen ion
Issue Date
2013-03
Publisher
Journal of the Korean Physical Society
Citation
VOL 62, NO 5, 781-786
Abstract
The effects of different irradiation doses of hydrogen ions on TiO2−x semiconductor films were investigated. The total doses were controlled between ~1014 and ~1015 atom/㎠ at an acceleration energy of 110 keV. The Hall mobility was manipulated by changing the irradiation dose while the carrier concentration was not. The amorphous crystal structure was consistently maintained upon irradiation. The electronic structures of the molecular orbitals in the conduction band were modified, and the band edge states below the conduction band increased with increasing irradiation dose. These changes in electronic structure were correlated to the chemical bonding states and could lead to variations in the Hall mobility without a structural transformation.
URI
http://pubs.kist.re.kr/handle/201004/45114
ISSN
03744884
Appears in Collections:
KIST Publication > Article
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