Study of the surface morphology of AlSb on GaAs grown by MBE and real-time growth monitoring by using in situ ellipsometry

Title
Study of the surface morphology of AlSb on GaAs grown by MBE and real-time growth monitoring by using in situ ellipsometry
Authors
김준영윤재진이은혜송진동신상훈김태중김영동
Issue Date
2013-06
Publisher
International Symposium on Functional Materials (IFFM)
Abstract
• We determined the optimized growth temperature of AlSb on GaAs is 530oC by performing structural study. • We identified the growth procedure of AlSb by measuring the ellipsometric parameter using in situ SE. • SE measurements were good agreement with the results of RHEED pattern, it proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth. • Study of AlSb will be useful databases for Sb-based optoelectronic applications and high speed devices
URI
http://pubs.kist.re.kr/handle/201004/45141
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KIST Publication > Conference Paper
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