Growth of Catalyst-free Zinc-Blende GaAs Nanowire Growth with As pulse injection

Title
Growth of Catalyst-free Zinc-Blende GaAs Nanowire Growth with As pulse injection
Authors
연규혁이은혜김수연송진동
Keywords
NWs; GaAs; As; pulse
Issue Date
2013-07
Publisher
Nano Korea 2013
Abstract
ㆍ In a growth of catalyst free GaAs nanowire, when Arsenic was injected by pulse while maintaining Ga injection, high Ga supersaturation could form nanowire nucleation easily though interaction between Ga and etched SiO2 layer in the initial of growth time. ㆍ we consistently had grown the continuous GaAs injection according to varying amount of As4 for increasing length. GaAs nanowire could promote further more with length L~3μm, diameter d~100 nm. ㆍ We could find full zinc-blende structure GaAs nanowire by transmission electron microscopy (TEM) analysis
URI
http://pubs.kist.re.kr/handle/201004/45161
Appears in Collections:
KIST Publication > Conference Paper
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