Formation of InGaAs nanowires on (111) Si for antireflection

Formation of InGaAs nanowires on (111) Si for antireflection
InGaAs; nanowire; Si; antireflection
Issue Date
International Symposium on Functional Materials (IFFM)
Semiconductor nanowires have potential for light trapping and absorption to improve efficiency of optoelectronic devices such as solar cells or light emitting diodes due to their structural properties [1-2]. Long, dense, and tapered nanowires have shown better antireflection properties in a wide range of wavelength [3]. However, the fabrication of the antireflective nanowires is mostly including an etching process. The nanostructures formed by etching can reduce the light efficiency on optoelectronic devices, since light could be absorbed in their own structures due to the trap sites made by damage from etching [1]. Furthermore, since the self-assembly growth of nanowires has merit of hetero-epitaxial growth, combination of various materials is possible [1]. In particular, self-assembled nanowires formed on a Si substrate for antireflection would be applied to Si-based optoelectronic devices. In this study, vertically-aligned, dense InGaAs nanowires were grown on the (111) Si substrates by Au-assisted molecular beam epitaxy. The structural properties of InGaAs nanowires were investigated by a scanning electron microscope and a transmission electron microscope. 18 µm- long nanowires showed excellent suppression of reflectance at various angles of incidence.
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