Formation of GaAs droplet quantum rings by droplet epitaxy
- Formation of GaAs droplet quantum rings by droplet epitaxy
- 이은혜; 송진동; 김지훈; 김수연; 배민환; 연규혁; 김준영; 한일기; 최원준; 장수경; 김종수
- GaAs; quantum ring; droplet epitaxy
- Issue Date
- ISPSA 2013
- III-V semiconductor quantum rings (QRs) have been a potential quantum structure in an optoelectronic device application and a fundamental physics [1-2]. The shape of QRs is a crucial factor to determine the optical properties, with the size, composition, strain and so on. A droplet epitaxial method would make it possible to control the shape of QRs due to a separation of a group 3 and 5 .
In this study, a growth of GaAs QRs on an Al0.3Ga0.7As/GaAs substrate will be shown. The growth parameters, such as a beam equivalent flux (BEF) of As4, a substrate temperature, a growth interruption time, and the size of Ga droplets, were varied. The As crystallization step is a critical factor in the growth of QRs. Dome-shaped islands evolved into rings with a decrease of BEF of As4. An increase of the interruption time at the sequential injection of the As beams increased the diameter of GaAs QRs. An increase of the substrate temperature during As injection has changed the shape of GaAs QRs. The size of Ga droplets can affect the shape of GaAs islands after crystallization. The internal thermal heating process was performed to improve the optical quality of GaAs QRs. The GaAs QRs with a distributed Bragg reflector showed the intense emission at ~ 740 nm at 77 K.
- Appears in Collections:
- KIST Publication > Conference Paper
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.