Formation of self-assembled large droplet-epitaxial GaAs islands for the application to reduced reflection
- Formation of self-assembled large droplet-epitaxial GaAs islands for the application to reduced reflection
- 이은혜; 송진동; 윤재진; 배민환; 한일기; 최원준; 장수경; 김영동; 김종수
- GaAs; droplet epitaxy; island; antireflection
- Issue Date
- Nano Korea 2013
- Higher and denser nanostructures with tapered shape have been preferred for antireflection in the broad wavelength range . Many researchers have fabricated various nanostructures, such as nanorods, nanocones and nanotips, for antireflection [2-4]. Recently, an interesting result on simple fabrication of parabola shaped nanostructures has been also reported, with suppression of the surface reflectance in the longer wavelength range . However, in spite of such advanced results, most fabrication methods are based on a top-down approach, including the etching process. Etching could introduce damage to the surface of devices, and degrade the performance of an optoelectronic device. Furthermore, it needs additional processes, such as definition of mask and etching. Up to now, only a few researchers have reported on self-assembled nanocolumns or nanorods with the antireflection property [2, 5]. Consequently, various studies focusing on nanostructure growth for light trapping and absorption are required.
In this study, the structural and reflectance properties of large Gallium (Ga) droplets and GaAs islands grown by droplet epitaxy (DE) will be presented. The diameter, height, density, and aspect ratio of large Ga droplets were investigated up to the scale of optical size. After GaAs island growth, the reflectance at s- polarization was reduced up to approximately 2 ~ 20 % in the wavelength range of 350 ~ 900 nm. The reflectance results of self-assembled large GaAs islands by DE suggest the possibility of a novel method for antireflective coating.
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