Effect of Complexing/Buffering Agents on Morphological Properties of CuInSe2 Layers Prepared by Single-Bath Electrodeposition
- Effect of Complexing/Buffering Agents on Morphological Properties of CuInSe2 Layers Prepared by Single-Bath Electrodeposition
- 이하나; 이원주; 서경원; 이도권; 김홍곤
- CuInSe2; CISe; superstrate-type CuInSe2 cell; electrodeposition; complexing agent; buffering agent
- Issue Date
- Current Photovoltaic Research
- VOL 1, NO 1, 44-51
- For preparing a device‐quality CuInSe2 (CISe) light‐absorbing layer by single‐bath electrodeposition for a superstrate‐type
CISe cell, morphological properties of the CISe layers were investigated by varying concentrations of sulfamic acid and potassium
biphthalate, complexing/buffering agents. CISe films were grown on an In2Se3 film by applying a constant voltage of ‐0.5V versus
Ag/AgCl for 90 min in a solution with precursors of CuCl2, InCl3, and SeO2, and a KCl electrolyte. A dense and smooth layer of CISe
could be obtained with a solution containing both sulfamic acid and potassium biphthalate in a narrow concentration range of
combination. A CISe layer prepared on the In2Se3 film with proper concentrations of complexing/buffering agents exhibited thickness
of 1.6~1.8 μm with few undesirable secondary phases. On the other hand, when the bath solution did not contain either sulfamic acid
or potassium biphthalate, a CISe film appeared to contain undesirable flake‐shape Cu2‐xSe phases or sparse pores in the upper part of film.
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