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dc.contributor.author이하나-
dc.contributor.author이원주-
dc.contributor.author서경원-
dc.contributor.author이도권-
dc.contributor.author김홍곤-
dc.date.accessioned2015-12-03T00:58:44Z-
dc.date.available2015-12-03T00:58:44Z-
dc.date.issued201307-
dc.identifier.citationVOL 1, NO 1, 44-51-
dc.identifier.issn22883274-
dc.identifier.other39938-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/45185-
dc.description.abstractFor preparing a device‐quality CuInSe2 (CISe) light‐absorbing layer by single‐bath electrodeposition for a superstrate‐type CISe cell, morphological properties of the CISe layers were investigated by varying concentrations of sulfamic acid and potassium biphthalate, complexing/buffering agents. CISe films were grown on an In2Se3 film by applying a constant voltage of ‐0.5V versus Ag/AgCl for 90 min in a solution with precursors of CuCl2, InCl3, and SeO2, and a KCl electrolyte. A dense and smooth layer of CISe could be obtained with a solution containing both sulfamic acid and potassium biphthalate in a narrow concentration range of combination. A CISe layer prepared on the In2Se3 film with proper concentrations of complexing/buffering agents exhibited thickness of 1.6~1.8 μm with few undesirable secondary phases. On the other hand, when the bath solution did not contain either sulfamic acid or potassium biphthalate, a CISe film appeared to contain undesirable flake‐shape Cu2‐xSe phases or sparse pores in the upper part of film.-
dc.publisherCurrent Photovoltaic Research-
dc.subjectCuInSe2-
dc.subjectCISe-
dc.subjectsuperstrate-type CuInSe2 cell-
dc.subjectelectrodeposition-
dc.subjectcomplexing agent-
dc.subjectbuffering agent-
dc.titleEffect of Complexing/Buffering Agents on Morphological Properties of CuInSe2 Layers Prepared by Single-Bath Electrodeposition-
dc.typeArticle-
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