Influence of hot carriers on catalytic reaction
- Influence of hot carriers on catalytic reaction; Pt nanoparticles on GaN substrates under light irradiation
- Pt nanoparticles on GaN substrates under light irradiation
- 김선미; 박다희; 육영지; 김상훈; 박정영
- Issue Date
- Faraday discussions
- VOL 162, 355-364
- We report the hot carrier-driven catalytic activity of two-dimensional arrays of Pt
nanoparticles on GaN substrate under light irradiation. In order to elucidate the
effect of a hot carrier in a catalytic chemical reaction, the CO oxidation reaction
was carried out on Pt nanoparticles on p- and n-type GaN under light irradiation.
Metal catalysts composed of Pt nanoparticles were prepared using two different
preparation methods: the one-pot polyol reduction and arc plasma deposition
methods. Under light irradiation, the catalytic activity of the Pt nanoparticles
supported on GaN exhibited a distinct change depending on the doping type. The
catalytic activity of the Pt nanoparticles on the n-doped GaN wafer decreased by
8–28% under light irradiation, compared to no irradiation (i.e., in the dark),
while the Pt nanoparticles on the p-doped GaN wafer increased by 11–33% under
light irradiation, compared to no irradiation. The catalytic activity increased on
the smaller Pt nanoparticles, compared to the larger nanoparticles, presumably
due to the mean free path of hot carriers. Based on these results, we conclude that
the flow of hot carriers generated at the Pt–GaN interface during light irradiation
is responsible for the change in catalytic activity on the Pt nanoparticles.
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