Combine p-type GaSb 2DHG hole device with n-type InGaAs channel for III-V CMOS

Title
Combine p-type GaSb 2DHG hole device with n-type InGaAs channel for III-V CMOS
Authors
신상훈송진동
Issue Date
2013-06
Publisher
International Symposium on Functional Materials (IFFM)
Abstract
- Here, we report a p-type device. It is called 2DHG. Also, It has p-type and n-type channel, at the same time. - We expect that it will be next generation III-V CMOS structure. (n-type channel: InGaAs layer, p-type channel: GaSb layer) - It will be soon ready to fabricate III-V CMOS for high-speed and low-powerconsumption applications.
URI
http://pubs.kist.re.kr/handle/201004/45196
Appears in Collections:
KIST Publication > Conference Paper
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