The growth of thin InSb using CGB technique and comparison with the electron mobility and doping density

Title
The growth of thin InSb using CGB technique and comparison with the electron mobility and doping density
Authors
신상훈송진동
Issue Date
2013-07
Publisher
ISPSA 2013
Abstract
Here, to solve the lattice mismatch between InSb and GaAs substrate, we tested InAlSb continuously graded buffers (CBG) layer using various material composition of In and Al. We grew optimized InAlSb buffer layer for InSb 2DEG HEMT on semi-insulator GaAs. Now, we will be soon ready to growth of InSb 2DEG HEMT and fabrication for high-speed and low-power-consumption applications.
URI
http://pubs.kist.re.kr/handle/201004/45197
Appears in Collections:
KIST Publication > Conference Paper
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