The growth of thin InSb using CGB technique and comparison with the electron mobility and doping density
- The growth of thin InSb using CGB technique and comparison with the electron mobility and doping density
- 신상훈; 송진동
- Issue Date
- ISPSA 2013
- Here, to solve the lattice mismatch between InSb and GaAs substrate, we tested InAlSb continuously graded buffers (CBG) layer using various material composition of In and Al.
We grew optimized InAlSb buffer layer for InSb 2DEG HEMT on semi-insulator GaAs.
Now, we will be soon ready to growth of InSb 2DEG HEMT and fabrication for high-speed and low-power-consumption applications.
- Appears in Collections:
- KIST Publication > Conference Paper
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.