Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films

Title
Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films
Authors
안형우정두석정병기이호석이호선김수동신상열김동환이수연
Keywords
threshold switching; localized states; GeSe films
Issue Date
2013-07
Publisher
Applied physics letters
Citation
VOL 103, NO 4, 042908-1-042908-3
Abstract
We investigated the effect of nitrogen (N) doping on the threshold voltage of an ovonic threshold switching device using amorphous GeSe. Using the spectroscopic ellipsometry, we found that the addition of N brought about significant changes in electronic structure of GeSe, such as the density of localized states and the band gap energy. Besides, it was observed that the characteristics of OTS devices strongly depended on the doping of N, which could be attributed to those changes in electronic structure suggesting a method to modulate the threshold voltage of the device.
URI
http://pubs.kist.re.kr/handle/201004/45214
ISSN
00036951
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KIST Publication > Article
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