Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices

Title
Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices
Authors
김수동안형우신상열정두석손서희이호선정병기신동욱이수연
Issue Date
2013-07
Publisher
ECS solid state letters : SSL
Citation
VOL 2, NO 10, Q75-Q77
Abstract
We studied GexSe1−x for the potential application in the Ovonic Threshold Switching (OTS) device. We found that, as Ge concentration increased, the thermal stability was deteriorated while the device performances were improved. In addition, using Spectroscopic Ellipsometry (SE) technique, the energy gap (Eg) and the Urbach energy (EU) were found to show non-monotonic dependences, with their minimum of about 1.0 eV of Eg for Ge0.6Se0.4 and 40 meV of EU for Ge0.5Se0.5. These changes are consistent with the changes in device characteristics, which might be explained in terms of the change in the number of Se-Se bondings.
URI
http://pubs.kist.re.kr/handle/201004/45237
ISSN
21628742
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KIST Publication > Article
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