A Study on the Scalability of a Selector Device Using Threshold Switching in Pt/GeSe/Pt

Title
A Study on the Scalability of a Selector Device Using Threshold Switching in Pt/GeSe/Pt
Authors
안형우정두석정병기김수동신상열임형광김동환이수연
Issue Date
2013-07
Publisher
ECS solid state letters : SSL
Citation
VOL 2, NO 9, N31-N33
Abstract
We performed a study on the scalability of Ovonic Threshold Switching (OTS) devices using an amorphous chalcogenide material, Ge0.4Se0.6. As the cell size decreased, the maximum driving current was estimated to be over 3 × 107 A/㎠, surpassing the state of the art devices based on crystalline Si. However, the threshold voltage (VTH), the holding voltage (VH), and the holding current (IH) were observed to increase laying challenges to be resolved for developing non-destructive and low-power consuming selector devices. VTH was found to be reduced by decreasing the thickness of GeSe film until 40 nm, below which it started to saturate. This might be associated with the Schottky barrier formed at the interface between the amorphous semiconductor and the metal electrode.
URI
http://pubs.kist.re.kr/handle/201004/45243
ISSN
21628742
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE