Properties of N-doped ZnO grown by DBD-PLD

Title
Properties of N-doped ZnO grown by DBD-PLD
Authors
임재현이득희이상렬
Keywords
ZnO; DBD-PLD; photoluminescence; N-doping
Issue Date
2009-11
Publisher
Thin solid films
Citation
VOL 518, NO 4, 1238-1240
Abstract
N-doped ZnO thin films have been grown on sapphire substrates by dielectric barrier discharged pulsed laser deposition (DBD-PLD). Low temperature photoluminescence spectra of N-doped ZnO film verified the p-type doping status to find the acceptor-bound exciton peaks with the high resolution detection. At low temperature growth, the major defects in the N-doped ZnO film were the oxygen interstitials that can combine with N, so that the N played the role as an acceptor. On the other hand, the major defects in the samples processed at high temperature were oxygen vacancies with which N doesn’t play the role as an acceptor. The acceptor binding energy of N acceptor was estimated to be about 105 meV.
URI
http://pubs.kist.re.kr/handle/201004/45523
ISSN
0040-6090
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KIST Publication > Article
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