A study on the temperature dependence of characteristics of phase change memory devices

Title
A study on the temperature dependence of characteristics of phase change memory devices
Authors
이수연정두석정증현우철박영욱안형우김원목정병기
Keywords
phase change memory; Ge2Sb2Te5; temperature dependence
Issue Date
2009-09
Publisher
Applied physics letters
Citation
VOL 95, NO 9, 093504-1-093504-3
Abstract
We investigated the temperature dependence of characteristics of phase change memory devices composed of Ge2Sb2Te5 (GST). We found that the RESET resistance (RR), SET resistance (RS), and SET time (tSET) decreased with increasing ambient temperature (Tamb.) while RESET current (IR) increased with Tamb. These results were explained in terms of the enhanced thermal activation of electrical conduction in GST and the increased thermal conductivity of the bottom electrode with Tamb.. Besides, threshold voltage (Vth) was found to decrease linearly with Tamb., seemingly in support of the relaxation semiconductor model and hopping-dominated transport model both of which predicted the existence of critical conductivity for threshold switching in chalcogenide glasses.
URI
http://pubs.kist.re.kr/handle/201004/45527
ISSN
0003-6951
Appears in Collections:
KIST Publication > Article
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