Phase change and electrical characteristics of Ge-Se-Te alloys

Title
Phase change and electrical characteristics of Ge-Se-Te alloys
Authors
이의복주병권김용태
Keywords
Ge-Se-Te alloys; phase change memory; Phase change materials; Chalcogenide
Issue Date
2009-09
Publisher
Microelectronic engineering
Citation
VOL 86, NO 7-9, 1950-1953
Abstract
Effects of Se contents in Ge–Se–Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge–Se–Te alloys.
URI
http://pubs.kist.re.kr/handle/201004/45543
ISSN
0167-9317
Appears in Collections:
KIST Publication > ETC
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