Microstress relaxation effect of Pb(Zr0.52Ti0.48)O3 films with thicknesses for micro/nanopiezoelectric device

Title
Microstress relaxation effect of Pb(Zr0.52Ti0.48)O3 films with thicknesses for micro/nanopiezoelectric device
Authors
이정훈황교선김태송
Issue Date
2010-03
Publisher
Applied physics letters
Citation
VOL 96, NO 9, 092904-1-092904-3
Abstract
In this study, we analyzed the microstress of Pb(Zr0.52Ti0.48)O3 (PZT) films using Raman spectrum and the macrostress using the wafer curvature method. Based on the stress analysis, we also determined the relationship between the residual stress and piezoelectric properties. We found that a thickness of 1 ㎛ was critical since the stress relaxation starts due to surface roughening. Similarly, the film thickness dependence of the piezoelectric coefficient had saturation values around 1 ㎛, where the preferred orientation started to change from (111) to (110), indicating that the piezoelectric response was related to the stress relaxation with a preferred orientation change.
URI
http://pubs.kist.re.kr/handle/201004/45560
ISSN
0003-6951
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KIST Publication > Article
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