Effects of ambient gas pressure on the resistance switching properties on the NiO thin films grown by radio frequency magnetron sputtering
- Effects of ambient gas pressure on the resistance switching properties on the NiO thin films grown by radio frequency magnetron sputtering
- 성태근; 김진성; 조경훈; 양민규; 김웅; 이전국; 문지원; 노재성; 남산
- resistance switching; NiO; gas prossure
- Issue Date
- Japanese journal of applied physics
- VOL 49, NO 12, 121103-1-121103-4
- NiO films were grown on a Pt substrate by radio frequency (RF) magnetron sputtering using a NiO ceramic target. A crystalline NiO phase with the
 preferred orientation was formed for the films grown above 100 ℃. Resistance switching behavior was not observed in the NiO films
annealed in the air or in ambient O2 after film deposition. However, the NiO films annealed in ambient N2 exhibited resistance switching
properties. The stability of the switching voltage was considerably influenced by the oxygen to argon ratio during film growth. In particular, the NiO
film grown under an 8.0 mTorr oxygen partial pressure exhibited stabilized switching voltages (Vset ~ 1:45 ± 0:20 V and Vreset ~ 0:62 ± 0:09 V).
Therefore, the control of the ambient gas pressure during the growth and annealing of the NiO films was important for obtaining good resistance
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