Effects of ambient gas pressure on the resistance switching properties on the NiO thin films grown by radio frequency magnetron sputtering

Title
Effects of ambient gas pressure on the resistance switching properties on the NiO thin films grown by radio frequency magnetron sputtering
Authors
성태근김진성조경훈양민규김웅이전국문지원노재성남산
Keywords
resistance switching; NiO; gas prossure
Issue Date
2010-12
Publisher
Japanese journal of applied physics
Citation
VOL 49, NO 12, 121103-1-121103-4
Abstract
NiO films were grown on a Pt substrate by radio frequency (RF) magnetron sputtering using a NiO ceramic target. A crystalline NiO phase with the [111] preferred orientation was formed for the films grown above 100 ℃. Resistance switching behavior was not observed in the NiO films annealed in the air or in ambient O2 after film deposition. However, the NiO films annealed in ambient N2 exhibited resistance switching properties. The stability of the switching voltage was considerably influenced by the oxygen to argon ratio during film growth. In particular, the NiO film grown under an 8.0 mTorr oxygen partial pressure exhibited stabilized switching voltages (Vset ~ 1:45 ± 0:20 V and Vreset ~ 0:62 ± 0:09 V). Therefore, the control of the ambient gas pressure during the growth and annealing of the NiO films was important for obtaining good resistance switching properties.
URI
http://pubs.kist.re.kr/handle/201004/45580
ISSN
0021-4922
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